The semiconductor laser beyond the locking range of optical injection
- 21 January 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (2) , 137-138
- https://doi.org/10.1049/el:19930092
Abstract
The voltage of a current-driven optically injected semiconductor laser has been measured. The experiments not only show the well known phenomenon of injection locking but also reveal unprecedented dispersive-like structures around the relaxation oscillation frequencies. Based on the single-mode rate equations a theoretical explanation of both phenomena is given. The dispersive-like structures are shown to be caused by four wave mixing.Keywords
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