Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers
- 15 May 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (10) , 4817-4821
- https://doi.org/10.1103/physrevb.15.4817
Abstract
A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.Keywords
This publication has 8 references indexed in Scilit:
- Absorption of oxygen in silicon in the near and the far infraredProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1970
- Absorption of Oxygen in Silicon in the Far InfraredPhysical Review Letters, 1969
- Vibrational Spectra of Lithium-Oxygen and Lithium-Boron Complexes in SiliconPhysical Review B, 1965
- Theory of the Contribution of Excitons to the Complex Dielectric Constant of CrystalsPhysical Review B, 1958
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Infrared Lattice Absorption Bands in Germanium, Silicon, and DiamondPhysical Review B, 1954
- Infra-Red Absorption in SiliconPhysical Review B, 1950