An automated system for the controlled stripping of thin silicon layers
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (2) , 81-84
- https://doi.org/10.1051/rphysap:0197800130208100
Abstract
An automated apparatus, consisting of an electronic programmer and a specially designed electrolitic cell, has been set up for the controlled stripping of silicon layers. The apparatus has been planned to be used in the determination of impurity concentration profiles with the technique of differentiel resistivity measurements by layer strippingKeywords
This publication has 3 references indexed in Scilit:
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- Doping and radiation damage profiles of P+ions implanted in silicon along the [110] axisRadiation Effects, 1974
- An automated radiochemical technique for measurement of impurity concentration profilesNuclear Instruments and Methods, 1973