A micron-thickness, planar Schottky diode chip for terahertz applications with theoretical minimum parasitic capacitance

4 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1305-1308 vol.3
https://doi.org/10.1109/mwsym.1990.99818

Abstract

The design and fabrication of a novel planar Schottky diode with greatly reduced shunt capacitance for millimeter- and submillimeter-wave applications is described. The dominant pad-to-pad shunt capacitance is minimized by replacing the substrate GaAs with a low-dielectric substitute. This replacement substrate can be easily removed by the user after the device is soldered into the mixer circuit. This will yield the minimum possible pad-to-pad shunt capacitance.

Keywords

This publication has 3 references indexed in Scilit:

Design and fabrication of 0.5 micron GaAs Schottky barrier diodes for low-noise terahertz receiver applications
International Journal of Infrared and Millimeter Waves, 1990
Low-parasitic, planar Schottky diodes for millimeter-wave integrated circuits
IEEE Transactions on Microwave Theory and Techniques, 1990
A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987