Investigation of Oxidation of Copper by Use of Radioactive Cu Tracer

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Abstract
A very thin layer of radioactive copper was electrolytically deposited on a copper blank. The surface was then oxidized in air at 1000°C for 18 minutes, giving an oxide layer with a thickness of 1.25×10−2 cm. After quenching, successive layers of the oxide were removed chemically, and the copper activity in each layer was measured. The observed self‐diffusion of radioactive copper in the oxide agrees quantitatively with a theory based on the following assumptions: (a) The oxide grows by diffusion of vacant Cu+ sites from the outer surface of the oxide inward to the metal. (b) The concentration of vacant sites as the oxygen‐oxide interface is independent of the oxide thickness, and drops linearly from this constant value to zero at the metal boundary. (c) Accompanying the inward flow of vacant sites, there is a flow of positive electron holes such as to maintain electrical neutrality. (d) Self‐diffusion of copper ions takes place only by motion into vacant sites. The results give a fairly direct confirmation of the theory of oxidation first suggested by Wagner.
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