Solution‐based Fabrication of High‐κ Gate Dielectrics for Next‐Generation Metal‐Oxide Semiconductor Transistors
- 16 January 2004
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 16 (2) , 118-123
- https://doi.org/10.1002/adma.200305731
Abstract
The layer‐by‐layer adsorption of precursor metal alkoxides in solution and post‐annealing at 400 °C affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next‐generation high‐κ gate dielectrics. A void‐free TiO2–La2O3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.Keywords
This publication has 39 references indexed in Scilit:
- A Simple Route to the Synthesis of Pr2O3 High‐k Thin FilmsAdvanced Materials, 2003
- Atomic layer deposition of thin hafnium oxide films using a carbon free precursorJournal of Applied Physics, 2003
- Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectricsIEEE Electron Device Letters, 2002
- Enhanced Emission in Composite Multilayers of Amorphous TiO2-Gel and Eu3+ IonsChemistry Letters, 2002
- Material and process limits in silicon VLSI technologyProceedings of the IEEE, 2001
- Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen SourcesScience, 2000
- Processing and characterisation of sol–gel deposited Ta2O5 and TiO2–Ta2O5 dielectric thin filmsSolid-State Electronics, 1999
- Thickness dependence of the effective dielectric constant in a thin film capacitorApplied Physics Letters, 1998
- Charge trapping and degradation in high-permittivity TiO2 dielectric filmsIEEE Electron Device Letters, 1997
- Stepwise Adsorption of Metal Alkoxides on Hydrolyzed Surfaces : A Surface Sol-Gel ProcessChemistry Letters, 1996