High-efficiency Q-band GaAs FET oscillator

29 March 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (7) , 297-298
https://doi.org/10.1049/el:19840203

Abstract

A microstrip GaAs FET oscillator using a 75 × 0.25 μm device has achieved an output power of 10 mW with an efficiency of 10% at 36 GHz. This oscillator was intended for local-oscillator applications at Q-band.

Keywords

MICROSTRIP OSCILLATOR
Q-BAND GAAS FET OSCILLATOR
10 MW
III-V SEMICONDUCTOR
36 GHZ
OUTPUT POWER
LOCAL-OSCILLATOR APPLICATIONS