Nature of thermal stresses and potential for reduced thermal buckling of thin silicon ribbon grown at high speed
- 1 September 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (1) , 69-82
- https://doi.org/10.1016/0022-0248(80)90232-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Silicon ribbon growth via the ribbon-to-ribbon (RTR) technique: Process update and material characterizationJournal of Electronic Materials, 1978
- Dislocation Structure and Macroscopic Characteristics of Plastic Deformation at Creep of Silicon CrystalsPhysica Status Solidi (b), 1969
- Macroscopic Plastic Properties of Dislocation-Free Germanium and Other Semiconductor Crystals. I. Yield BehaviorJournal of Applied Physics, 1963
- Mechanical properties of single crystals of siliconPhilosophical Magazine, 1962