Mask Dependent Etch Rates II: The Effect of Aluminum vs. Photoresist Masking on the Etch Rates of Silicon and Silicon Dioxide in Fluorine Containing Plasmas

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Abstract
Germanium nitride was deposited onto polished germanium wafers by low pressure chemical vapor deposition (LPCVD). Depositions were performed in a hot‐wall quartz tube system at temperatures from 450° to 600°C, using and reactants. Details of the deposition procedure and apparatus are reported here. Deposition rates of 5–50 Å per min were obtained, yielding films having refractive indexes of , as measured by ellipsometry. The dependence of deposition rate on temperature and gas flow parameters is reported. Infrared transmission data, as well as etch rate data, are also presented.

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