THE CONCEPT OF “SURFACE-TRAPPED HOLE” AS AN INTERMEDIATE OF ANODIC REACTION OF A GALLIUM PHOSPHIDE SEMICONDUCTOR ELECTRODE
- 5 January 1981
- journal article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 10 (1) , 127-130
- https://doi.org/10.1246/cl.1981.127
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoanodic Dissolution Reaction of an n‐Type Gallium Phosphide Electrode and Its Effect on Energies of the Electronic Bands at the SurfaceJournal of the Electrochemical Society, 1980
- The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devicesJournal of the American Chemical Society, 1980
- Photoexcitation and Luminescence in Redox Processes on Gallium Phosphide ElectrodesJournal of the Electrochemical Society, 1969
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947