Origin of non-uniformity in MBE grown nanometer-sized InGaAs ridge quantum wires and its removal by atomic hydrogen-assisted cleaning
- 19 December 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 380 (1-2) , 189-191
- https://doi.org/10.1016/s0040-6090(00)01500-5
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned SubstratesJapanese Journal of Applied Physics, 1999
- The passivation of InP by arsenic surface stabilization and Al2O3 deposition: Correlations between interface chemistry and capacitance measurementsJournal of Applied Physics, 1990