Step-flow growth and fractional-layer superlattices on GaAs vicinal surfaces by MOCVD
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 61-64
- https://doi.org/10.1016/0022-0248(91)90712-e
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxyApplied Physics Letters, 1991
- Ideal Crystal Growth from Kink Sites on a GaAs Vicinal Surface by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1990
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor depositionJournal of Vacuum Science & Technology B, 1988