Neutron Damage in GaP Light-Emitting Diodes
- 1 February 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (3) , 110-112
- https://doi.org/10.1063/1.1654068
Abstract
The effects of neutron damage on the red and green light output at 300 °K of GaP lightemitting diodes have been examined. The results indicate that the diodes are not sensitive to neutron irradiation in those voltage regions where the radiative current is due to spacecharge recombination in the depletion layer. As a consequence of this, it is shown that the response of the diodes to neutron irradiation can be used to elucidate the radiative currentflow mechanisms in these devices.Keywords
This publication has 7 references indexed in Scilit:
- HIGH-EFFICIENCY RED-EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATESApplied Physics Letters, 1970
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n JunctionsJapanese Journal of Applied Physics, 1970
- Voltage Dependence of Electroluminescence from GaP Diodes Prepared by Liquid Epitaxial TechniquesJournal of Applied Physics, 1969
- Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaPJournal of Applied Physics, 1966
- Electrical and Electroluminescent Properties of Gallium Phosphide DiffusedJunctionsPhysical Review B, 1966
- EFFECTS OF γ-IRRADIATION UPON LIFETIME AND LUMINESCENCE OF GaP DIODESApplied Physics Letters, 1964
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957