Characterization of ultra-shallow junctions with tapered groove profilometry and other techniques

The tapered groove profilometry (TGP) technique was applied to a series of activated ultra-shallow junctions produced by implants of ${\text{1×10}}^{15} {\mathrm{B cm}}^{\mathrm{-2}}$ at 0.25, 0.50 and 1.0 keV, by implants of ${\text{1×10}}^{15}$ As cm⁻² at 2.0 keV, and by implants of ${\text{1×10}}^{15} {\mathrm{BF}}_{\mathrm{2}}{\mathrm{ cm}}^{\mathrm{-2}}$ at 2.0, 3.5, 4.25 and 5.0 keV. The values obtained were compared to SIMS and SRP measurements made on the identical wafer. It was found that the TGP measurements tracked the SIMS values but at a lower level. For the B implants this was approximately 200Å, for the As and ${\mathrm{BF}}_{\mathrm{2}}$ implants it was approximately 100Å. The TGP measurements tracked the SRP values much more closely.