Summary Abstract: Elimination of low-temperature drain I–V collapse of selectively doped (Al,Ga)As/GaAs heterostructure transistors by a modulation-doped superlattice donor layer
- 1 March 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (2) , 802
- https://doi.org/10.1116/1.583107
Abstract
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