Bulk and surface electronic bands of InP(110) determined by angle-resolved photoemission

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Abstract
The bulk electronic energy-band structure of InP along the Γ–K–X direction has been experimentally determined through angle-resolved photoemission with use of synchrotron radiation, from a cleaved InP(110) crystal. Good agreement with empirical nonlocal-pseudopotential calculations is found, although deviations occur for the size of the heteropolar gap. By recording spectra at different polar angles and photon energies, we have determined those peaks which exhibit surface-resonance character, and have mapped these within directions of high symmetry in the surface Brillouin zone. These are compared with existing calculations of the surface band structure of the relaxed InP(110) surface. The intensity of transitions from the phosphorus-derived dangling-bond surface state close to the valence-band maximum exhibits strong oscillations as a function of photon energy. These are related to transitions into the unoccupied bands near the Γ point in k space.