Electronic structure of random semiconductor alloys by the tight-binding linear muffin-tin orbital method
- 15 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (14) , 10029-10032
- https://doi.org/10.1103/physrevb.40.10029
Abstract
A new approach to the electronic structure of disorderd semiconductor alloys is developed, which combines the first-principles tight-binding linear muffin-tin orbital method with empty interstitial spheres to describe the electron states of open-structure materials, the coherent-potential approximation to treat the alloy disorder, and the Löwdin downfolding technique to take full advantage of the minimal basis set. Application is made to random Te alloys with a zinc-blende structure, but our approach is equally suitable for a description of semiconductor alloys with diamond, rocksalt, or fluorite structures.
Keywords
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