In situ scanning force microscopy study of TiN layers in sulphuric acid
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 15 (6) , 1865
- https://doi.org/10.1116/1.589569
Abstract
Morphological changes of sputter-deposited TiN films in 0.1 M sulphuric acid have been followed in situ with scanning force microscopy at different potentials. Disappearance of small structures was observed with increasing potential up to 1.2 V. A further increase of potential above 1.5 V resulted in growth of larger grains. Two passivation peaks at about 0.6 and 1.2 V, respectively, were recorded for the TiN films. The passivating layers formed at these two passivation peaks were characterized by x-ray photoelectron spectroscopy. At the lower passivation peak, titanium suboxides or oxynitrides were detected, while TiO2 was formed at potentials above 1.2 V.Keywords
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