Anneal behaviour of compositional and electrical characteristics of vanadium implanted silicon
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 280-283
- https://doi.org/10.1016/0168-583x(89)90787-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Formation of vanadium silicide by high dose ion implantationSurface Science, 1987
- Chemical reaction and Schottky-barrier formation at V/Si interfacesPhysical Review B, 1984
- The nature of defect layer formation for arsenic ion implantationJournal of Applied Physics, 1983
- Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafersApplied Physics Letters, 1973