Threshold, spectral, and output power characteristics of GaAs/Ga1−xAlxAs single-heterostructure diode lasers
- 1 September 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (5) , 257-259
- https://doi.org/10.1063/1.1654880
Abstract
By using an antireflection‐coated GaAs diode in conjunction with a diffraction grating, we show that the diode threshold current and output power are strong functions of the lasing wavelength. The diode threshold is lowest at the longer wavelengths at which it is possible to lase the diode, but the total output power in this wavelength region is limited. The data are useful in interpreting the characteristics (spectral, threshold, and power) of a normal uncoated diode laser.Keywords
This publication has 5 references indexed in Scilit:
- High-power narrow-linewidth operation of GaAs diode lasersApplied Physics Letters, 1973
- Experimental properties of injection lasers: modal distribution of laser powerJournal of Applied Physics, 1973
- Dependence of Threshold Current Density and Efficiency on Fabry-Perot Cavity Parameters: Single Heterojunction (AlGa)As–GaAs Laser DiodesJournal of Applied Physics, 1972
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970
- Large Wavelength Changes with Cavity Q in Injection LasersJournal of Applied Physics, 1966