Type-II interband quantum cascade laser at 3.8 µm
- 27 March 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (7) , 598-599
- https://doi.org/10.1049/el:19970421
Abstract
The authors have demonstrated the first stimulated emission from Sb-based type-II quantum cascade configuration. Laser emission at 3.8 µm has been observed for temperatures up to 170 K. The device was composed of 20 periods of active regions separated by digitally graded quantum-well injection regions.Keywords
This publication has 10 references indexed in Scilit:
- Long wavelength infrared (λ≂11 μm) quantum cascade lasersApplied Physics Letters, 1996
- Type II mid-IR lasers operating above room temperatureElectronics Letters, 1996
- Mid-IR interband cascade electroluminescence intype-II quantum wellsElectronics Letters, 1996
- InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Novel type-II quantum cascade lasersJournal of Applied Physics, 1996
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- Type-II and type-I interband cascade lasersElectronics Letters, 1996
- Midwave infrared stimulated emission from a GaInSb/InAs superlatticeApplied Physics Letters, 1995
- Infrared laser based on intersubband transitions in quantum wellsSuperlattices and Microstructures, 1995