Plasma-assisted molecular beam epitaxy of GaN:In film on sapphire(0001) having the single polarity of (0001)
- 29 February 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (2-3) , 364-367
- https://doi.org/10.1016/s0022-0248(99)00571-0
Abstract
No abstract availableKeywords
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