Improvement in Open-Circuit Memory, Current Efficiency and Response Speed of an Amorphous WO3 Solid-State Electrochromic Device
- 1 November 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (11R)
- https://doi.org/10.1143/jjap.21.1642
Abstract
The desirable configuration of an amorphous WO3 (a-WO3) solid-state electrochromic device (ECD) was examined in order to improve the poor open-circuit memory and low current efficiency observed in an a-WO3/Cr2O3 ECD. It was found that a device with an SiO2 (or Nb2O5) layer introduced between the a-WO3 layer and the Cr2O3 layer exhibited long open-circuit memory and good current efficiency. The charge dissipation in the a-WO3/SiO2 (or Nb2O5)/Cr2O3 ECD was as low as that in an a-WO3/liquid electrolyte ECD. In addition, reactive evaporation of Cr2O3 in an atmosphere of H2O activated by thermal electrons was attempted in an effort to better the response speed of the device.Keywords
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