Low-energy erbium implanted Si 3 N 4 /SiO 2 /Si waveguides
- 19 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (24) , 2242-2243
- https://doi.org/10.1049/el:19921441
Abstract
Photoluminescence spectroscopy studies of low energy erbium and erbium/oxygen-implanted silicon-nitride waveguides are compared. Emission spectra show peaks at 1533 and 1548nm. The optimum annealing temperature is determined to be 1175°C, yielding lifetimes up to 7ms and a several decade intensity increase. Er implantation yields more than 40% longer lifetime and higher intensity than Er/O.Keywords
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