A low leakage 10 000-V silicon photoconductive switch
- 15 November 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1130-1131
- https://doi.org/10.1063/1.95043
Abstract
Under high bias voltage, the leakage current through a silicon photoconductive switch is mainly caused by carrier injection at the metallic contacts. A low leakage, high voltage silicon photoconductive switch is fabricated by the introduction of carrier trap centers between the silicon substrate and metallic contacts. We report 2.5-mm gap photoconductive switches with leakage currents of less than 50 mA at a pulse bias of 10 kV for 600 ns, and an ‘‘on’’ resistance of less than 1.3 Ω, when illustrated by a 1-ns, 1000-μJ pulse of 1.05-μm radiation.Keywords
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