ASYMMETRY OF ISOLATED DISLOCATIONS MOBILITY IN Ge AND Si SINGLE CRYSTALS

1 September 1983

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 44 (C4) , C4-85
https://doi.org/10.1051/jphyscol:1983410

Abstract

Change of dislocation velocities in Ge and Si caused by inversion of applied shear stress sign has been investigated as a function of temperature, stresses and thermal treatment conditions. The results obtained are discussed with account of the influence of dislocation splitting and dislocation-point defects interaction on the double kinks formation and extension

Keywords

ASYMMETRY
DISLOCATIONS MOBILITY
SI SINGLE
ISOLATED DISLOCATIONS
SINGLE CRYSTALS

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