Inversion layers in abrupt p-n junctions
- 1 June 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (6) , 717-726
- https://doi.org/10.1016/0038-1101(70)90059-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Approximations for accumulation and inversion space-charge layers in semiconductorsSolid-State Electronics, 1968
- An accurate numerical steady-state one-dimensional solution of the P-N junctionSolid-State Electronics, 1968
- Space-Charge Capacitance of Asymmetric, Abrupt p-n JunctionsJournal of Applied Physics, 1967
- Depletion-Layer Capacitance of p+n Step JunctionsJournal of Applied Physics, 1967
- Die Sperrschichtkapazität des legierten Germanium-Indium-GleichrichtersThe European Physical Journal A, 1954