Band lineups at the GaSb-AlxGa1−xSb hetero-junction: Experimental evidence for a new common anion rule
- 31 March 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 61 (11) , 703-706
- https://doi.org/10.1016/0038-1098(87)90720-4
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental workSurface Science, 1986
- Tight-binding theory of heterojunction band lineups and interface dipolesJournal of Vacuum Science & Technology B, 1986
- Theoretical calculations of semiconductor heterojunction discontinuitiesJournal of Vacuum Science & Technology B, 1986
- Band Lineups at II-VI Heterojunctions: Failure of the Common-Anion RulePhysical Review Letters, 1986
- CdTe-HgTe (¯1¯1¯1) Heterojunction Valence-Band Discontinuity: A Common-Anion-Rule ContradictionPhysical Review Letters, 1986
- Theory of semiconductor heterojunctions: The role of quantum dipolesPhysical Review B, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- GaSb/AlSb multiquantum well structures: Molecular beam epitaxial growth and narrow-well photoluminescenceApplied Physics Letters, 1983
- Optical properties of GaSb–AlSb superlatticesJournal of Vacuum Science & Technology B, 1983
- Polytype Superlattices and Multi-HeterojunctionsJapanese Journal of Applied Physics, 1981