Photoconductivity decay model in a-Si: H at low temperatures
- 30 November 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 52 (6) , 589-591
- https://doi.org/10.1016/0038-1098(84)90884-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Transient photoconductivity and photo-induced optical absorption in amorphous semiconductorsPhilosophical Magazine Part B, 1982
- Drift and diffusion in materials with trapsPhilosophical Magazine Part B, 1982
- Photoconductivity of amorphous semiconductorsSolid State Communications, 1981
- Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Optical Studies of Excess Carrier Recombination in-Si: H: Evidence for Dispersive DiffusionPhysical Review Letters, 1980
- Sputtered hydrogenated amorphous siliconJournal of Electronic Materials, 1979
- Drift Mobility and Photoconductivity in Amorphous SiliconPhysica Status Solidi (b), 1978
- Electron and hole drift mobility in amorphous siliconApplied Physics Letters, 1977
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Refined Theory of Ion Pairing. I. Equilibrium AspectsThe Journal of Chemical Physics, 1956