Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors

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Abstract
With the standard plane−parallel configuration of semiconductor detectors, good γ−ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts of hemispherical configuration one can obtain γ−ray spectra of adequate resolution and with signal heights of nearly full amplitude even when only one type of carrier is collected. Experiments with CdTe detectors for which the μτ product for electrons is about 103 times that of the holes confirm these calculations. The adoption of hemispherical contacts thus widens the range of high−resistivity semiconductors potentially acceptable for γ−ray detection at room temperature.

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