Deposition and Properties of Yttria‐Stabilized Bi2 O 3 Thin Films Using Reactive Direct Current Magnetron Cosputtering

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Abstract
Yttria‐stabilized (YSB) thin films have been deposited using reactive direct current (d.c.) magnetron cosputtering from Y and Bi targets. The films were deposited in argon/oxygen sputtering gas mixtures onto silica glass, , and substrates. thin films with were obtained under metallic mode sputtering conditions, but were found to be ≈10% oxygen deficient. Post‐deposition annealing in air at led to fully stoichiometric films. X‐ray diffraction and transmission electron microscope (TEM) studies showed that the structure of the annealed films was cubic with lattice parameters following Vegard's law. The films were dense as judged by scanning electron microscope (SEM) and TEM. Complex impedance spectroscopy measurements were carried out in air on films with cermet electrodes. The temperature dependent ionic conductivity exhibited a knee point at , with activation energies of 1.2 eV below and 0.96 eV above , in good agreement with values for bulk YSB with the same composition. The interfacial resistance of the cermet with 30 volume percent (v/o) Ag on a YSB electrolyte thin film was ≈0.3 Ω cm2 at 750°C.

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