Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

• 21 August 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 67  (8) , 1131-1133
• https://doi.org/10.1063/1.114984

Abstract

Keywords

• GALLIUM ARSENIDE
• STRESS RELAXATION
• ENERGY LEVELS
• VALENCE BAND
• DISLOCATIONS
• KINETICS