Electrical Properties of Selenium. III. Microcrystalline Selenium Metal Doped
- 1 January 1954
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 25 (1) , 1-11
- https://doi.org/10.1063/1.1721489
Abstract
The thermoelectric powers and dc and 200-mc resistivities of pure and metal-doped selenium have been studied as functions of temperature. The properties of materials in the two important microstructures (colony and equiaxed) were distinguished. The influences of the metals Na, Cu, Ag, Mg, Zn, Cd, Hg, Ga, In, Tl, Pb, Sb, Bi, Te, Fe, Ni, Co, and Ce were noted. A working model of the selenium semiconductor was developed. In this model there is an acceptor level 160°C the density of acceptor levels decreases as defects are removed by structural changes in the lattice.This publication has 5 references indexed in Scilit:
- Electrical Properties of Liquid Selenium IJournal of Applied Physics, 1953
- Electrical Properties of Selenium. II. Microcrystalline SeleniumJournal of Applied Physics, 1951
- Electrical Properties of Selenium: I. Single CrystalsJournal of Applied Physics, 1951
- Conductivity of Liquid Selenium-200°–500°CJournal of Applied Physics, 1950
- über die Leitfähigkeit von mikrokristallinem, halogenhaltigen SelenThe European Physical Journal A, 1950