Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation Processing
- 1 June 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 20 (3) , 1032-1034
- https://doi.org/10.1109/TNS.1973.4327318
Abstract
Radioactive tracer measurements have been performed in order to establish limits for the degree of sputtered contamination to be expected during implantation processing in stainless steel target chambers. The information collected provides a useful set of working curves for the particular wafer-holding arrangement employed, and is presented in a form that should be convenient for use in the design of other stainless steel target-holder geometries.Keywords
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