Localization and quantization in silicon inversion Iayers
- 1 May 1985
- journal article
- research article
- Published by Taylor & Francis in Contemporary Physics
- Vol. 26 (3) , 257-293
- https://doi.org/10.1080/00107518508223685
Abstract
A review is presented of two of the many topical areas of interest in two-dimensional transport in silicon inversion layers. The first topic is localization: strong localization in a band tail, and quantum interference and the possible localization of all states in two dimensions. The second topic is the quantum Hall effect which is a manifestation of localization in a strong magnetic field.Keywords
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