Ensemble Monte Carlo simulation of semiclassical nonlinear electron transport across heterojunction band discontinuities
- 31 May 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (5) , 877-885
- https://doi.org/10.1016/0038-1101(88)90041-x
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- New effects of structure in momentum and real space on nonlinear transport across heterojunction band discontinuitiesApplied Physics Letters, 1987
- Band-Gap Engineering: From Physics and Materials to New Semiconductor DevicesScience, 1987
- Theory of the doped quantum well superlattice APD: A new solid-state photomultiplierIEEE Journal of Quantum Electronics, 1986
- Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlatticeIEEE Journal of Quantum Electronics, 1986
- Monte Carlo study of electronic transport in As/GaAs single-well heterostructuresPhysical Review B, 1986
- Theory of electron and hole impact ionization in quantum well and staircase superlattice avalanche photodiode structuresIEEE Transactions on Electron Devices, 1985
- Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratioIEEE Transactions on Electron Devices, 1983
- Single-carrier-type dominated impact ionisation in multilayer structuresElectronics Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980