Complementary heterostructure insulated gate field effect transistors (HIGFETs)

1 January 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 317-320
https://doi.org/10.1109/iedm.1985.190962

Abstract

Both n-channel and p-channel high mobility (Al,Ga)As/GaAs heterostructure insulated gate field effect transistors (HIGFETs) have been fabricated for the first time on the same planar wafer surface using MBE and a self-aligned gate by ion implantation process. Enhancement-mode (E-mode) n-channel HIGFETs have demonstrated extrinsic transconductances of 385 mS/mm at 77 K and 218 mS/mm at room temperature. E-mode p-channel HIGFETs have demonstrated extrinsic transconductances of 59 mS/mm at 77 K and 28 mS/mm at room temperature. These are the highest transconductance values ever reported for a p-channel FET device. The hole field effect mobility was deduced from 3-µm gate length p-channel HIGFETs to be 1,300 cm ² /Vs and 500 cm ² /Vs at 77 K and room temperature, respectively. The HIGFET approach appears to be very promising for the development of a new generation of high speed, low power complementary circuits.

Keywords

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