Temperature profiles induced by a scanning cw laser beam
- 1 June 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4364-4371
- https://doi.org/10.1063/1.331217
Abstract
We present calculations of the temperature profiles induced by a moving cw elliptical laser beam with a Gaussian intensity distribution in a semi-infinite material. Temperature-dependent thermal diffusivity, conductivity, and surface reflectivity are incorporated in our model, and some aspects of melting are discussed. As an example, we apply the calculations to silicon. For a comparison of stationary elliptical spots of varying eccentricities, we present material-independent normalized linear temperature profiles. We find that highly elliptical beams can be used to rapidly scan and anneal large areas.This publication has 5 references indexed in Scilit:
- CW Laser Annealing Of Ion-Implanted SiliconPublished by SPIE-Intl Soc Optical Eng ,1980
- Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beamJournal of Applied Physics, 1980
- Temperature rise induced by a laser beam II. The nonlinear caseApplied Physics Letters, 1978
- Temperature rise induced by a laser beamJournal of Applied Physics, 1977
- Heat treating and melting material with a scanning laser or electron beamJournal of Applied Physics, 1977