Dependence of photoluminescence of n-GaAs on surface treatment
- 1 March 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (5) , 325-327
- https://doi.org/10.1016/0038-1098(73)90765-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Radiative Lifetimes of Donor-Acceptor Pairs in-Type Gallium ArsenidePhysical Review B, 1969
- Polishing Damage and Luminescence in p‐Type GaAsPhysica Status Solidi (b), 1969
- Cathodoluminescence of n-Type GaAsJournal of Applied Physics, 1968
- IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GaAsApplied Physics Letters, 1965
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962