Base-collector junction capacitance of bipolar transistors operating at high current densities

1 November 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (11) , 2304-2308
https://doi.org/10.1109/t-ed.1987.23236

Abstract

An analytical physics-based comprehensive base-collector junction capacitance model is presented. The model, which includes high-current effects, describes the base-collector space-charge-region capacitance for all operating regions, including the saturation region in which the space-charge region becomes forward biased. The present model is compared with the depletion capacitance model and significant discrepancies are predicted. An emitter-coupled logic gate circuit is used to demonstrate the practical usefulness of the model.

Keywords

MODEL
CAPACITANCE
BASE COLLECTOR
BASED COMPREHENSIVE
COLLECTOR JUNCTION
CHARGE REGION
SPACE CHARGE

This publication has 0 references indexed in Scilit: