Band gap energy in nanocrystalline ZrO2:16%Y thin films
- 18 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (3) , 341-343
- https://doi.org/10.1063/1.123065
Abstract
The results of optical absorption measurements on nanocrystalline thin films are presented. Dense 0.7 μm thick films with 1–300 nm grain size have been obtained on sapphire substrate using a polymeric precursor spin coating technique. The relationship between the energy gap and microstructure of has been determined and discussed. The quantum confinement effect was observed at the grain size lower than 100 nm with the band gap energy shift of 0.25 eV when the microstructure was changed up to 1 nm. Some limitation of the model has been observed and discussed. The band gap energy of has been determined as microstructure independent value.
Keywords
This publication has 13 references indexed in Scilit:
- Nanostructured oxide thin films for gas sensorsSensors and Actuators B: Chemical, 1998
- The structure and electrical properties of SrCe0.95Yb0.05O3 thin film protonic conductorsSolid State Ionics, 1997
- The transport properties of nanocrystalline SrCe0.95Yb0.05O3 thin filmsApplied Physics Letters, 1996
- Defect and transport properties of nanocrystalline CeO2−xApplied Physics Letters, 1996
- Immittance Response of La0.6Sr0.4Co0.2Fe0.8 O 3 Based Electrochemical CellsJournal of the Electrochemical Society, 1995
- Optical absorption studies of tetragonal and cubic thin-film yttria-stabilized zirconiaSensors and Actuators B: Chemical, 1992
- Intrinsic electron and hole defects in stabilized zirconia single crystalsPhysical Review B, 1990
- Spectroscopic investigation of oxygen vacancies in solid oxide electrolytesApplied Physics A, 1990
- Color-center-induced band-gap shift in yttria-stabilized zirconiaPhysical Review B, 1989
- Electron–electron and electron-hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic stateThe Journal of Chemical Physics, 1984