Field-implant-free isolation by double-well split drive-in
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 215-217
- https://doi.org/10.1109/55.55254
Abstract
A double-well CMOS concept well suited to conventional and state-of-the-art isolation techniques is presented. Sufficient field doping is achieved by solely distributing the well drive-in thermal budget before and after field oxidation. Segregation effects, in particular dopant loss in the p-well, are compensated. At the same time the body factor and parasitic capacitances are kept low. The split drive-in approach makes channel-stop implants and corresponding lithography steps superfluous. The field doping adjustment is self-aligned, a very significant advantage in submicrometer regime processing.Keywords
This publication has 2 references indexed in Scilit:
- Hot carriers in small geometry CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Selective polysilicon oxidation technology for defect free isolationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980