Device performance of submicrometre MESFETs with LTG passivation
- 19 August 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (17) , 1550-1551
- https://doi.org/10.1049/el:19931033
Abstract
The device characteristics of a submicrometre GaAs MESFET with low-temperature-grown GaAs passivation are reported. The fabricated device has a high gate-drain breakdown voltage of over 20 V with a maxium drain current of 340mA/mm and a transconductance of 200mS/mm. Microwave measurement of the device yields a cutoff frequency of 32 GHz, and an unusually high maximum frequency of oscillation of 110 GHz. These combined characteristics demonstrate the potential of the device as a viable power amplifier in the millimetre-wave frequency range.Keywords
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