Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

This publication has 125 references indexed in Scilit:

• Formation of SiOF Films by Plasma-Enhanced Chemical Vapor Deposition Using (C₂H₅O)₃SiF
  Japanese Journal of Applied Physics, 1996
• Low-temperature processed MOSFETs with liquid phase deposited SiO/sub 2-x/F_x as gate insulator
  IEEE Electron Device Letters, 1995
• Performance and off-state current mechanisms of low-temperature processed polysilicon thin-film transistors with liquid phase deposited SiO/sub 2/ gate insulator
  IEEE Transactions on Electron Devices, 1994
• Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide
  Japanese Journal of Applied Physics, 1994
• Stability of a new polyimide siloxane film as interlayer dielectrics of ULSI multilevel interconnections
  Thin Solid Films, 1993
• Vapor deposition of parylene-F by pyrolysis of dibromotetrafluoro-p-xylene
  Journal of Vacuum Science & Technology A, 1993
• Deposition of amorphous fluoropolymer thin films by thermolysis of Teflon amorphous fluoropolymer
  Applied Physics Letters, 1992
• The effect of stress-induced voiding on electromigration
  Journal of Applied Physics, 1992
• Polyimide insulators for multilevel interconnections
  Thin Solid Films, 1981
• A Novel Planar Multilevel Interconnection Technology Utilizing Polyimide
  IEEE Transactions on Parts, Hybrids, and Packaging, 1973