Concentration Dependence of Fluorescence Lifetime of Nd3+-Doped Gd3Ga5O12 Lasers
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A) , L759
- https://doi.org/10.1143/jjap.23.l759
Abstract
The Nd3+ concentration dependence of the fluorescence lifetime in laser crystal Gd3Ga5O12(GGG) for high power and high efficiency solid state laser is reported for the first time. The dominant mechanism of the concentration quenching in Nd3+: GGG rises from the electric dipole-dipole interaction between Nd3+ ions. The nonradiative transition probability of the 4F3/2 state is found to be proportional to the Nd3+ concentration squared up to the Nd3+ concentration of 5×1020 cm-3. The optimum Nd3+ concentration in Nd3+: GGG is estimated to be (3.4±0.5)×1020 cm-3 in pulsed laser operation.Keywords
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