The redistribution of implanted dopants after metal-silicide formation

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Abstract
The redistribution of implanted As and Sb following metal‐silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd2Si caused a partial rejection of As for implanted doses of 2×1015 cm−2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity‐metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.