On the Reaction Kinetics in a Mercury Photosensitized CVD of a-Si:H Films

Abstract
The reaction kinetic processes for mercury photosensitized CVD (Hg*–CVD) in silane were analyzed using a time-dependent, one-dimensional calculation based on mass-, momentum- and energy-conservation equations, including simplified surface reactions such as radical adsorption and hydrogen elimination from the substrate. A good agreement between the measured and the calculated time-varying concentrations of species provides sufficient validity regarding the present model. It is also shown that the saturation of the SiH4 decomposition observed by many authors in closed systems can be explained by the abstraction of SiH4 from the surfaces by radicals peculiar to the Hg*–CVD (e.g., HgH); gas-phase reactions are significantly influenced by surface reactions when the volume-to-surface ratio becomes small.