Molecular-dynamics simulation of cluster and atom deposition on silicon (111)

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Abstract
The deposition of Si atoms and Si-atom clusters on a silicon (111) surface has been studied with molecular-dynamics simulations using two- and three-body interatomic Si potentials. The energy deposition and dynamics of Si-atom deposition have been studied as a function of substrate temperature, incident atom energy, and substrate thickness. Epitaxial Si(111) layers have been grown by single-atom deposition. The energy deposition and spreading of Si-atom clusters is characterized as a function of substrate temperature, initial cluster velocity, cluster temperature, and cluster size. A range of deposition parameters has been characterized that lead to high spreading of clusters, a feature that is necessary for achieving epitaxial thin-film growth.