Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

Publisher Website
Google Scholar
Abstract
For pt.I see ibid., vol.15, p.1229 (1985). The electrical properties of amorphous Fe1-xBx alloys produced by ion implantation at room temperature have been studied in a companion paper (I). This paper reports the results of 6K irradiation (with 100 keV 1H, 540 keV 86Kr and 209Bi ions) and subsequent annealing of the Fe0.76B0.24 alloy. The electrical resistivity measurements are analysed in terms of irradiation-induced 'point defects' and are compared with those reported previously for Fe-B alloys quenched from the melt. Both the spontaneous recombination volume ( nu 0=29+or-4 atomic volumes) and the intrinsic resistivity of induced defects ( rho d=133+or-20 mu Omega cm) are found to be lower than those measured in Fe-B alloys quenched from the melt. The displacement cascade effects induced by heavy-ion irradiation are also studied: the irradiation efficiency is found to be lower for 86Kr irradiation than for 1H irradiation, as in crystalline metals. However, in contrast to the case of crystalline metals, the increase in saturation resistivity is the same whether or not displacement cascades occur during irradiation.