The modified fletcher boundary conditions
- 31 January 1975
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (1) , 107-109
- https://doi.org/10.1016/0038-1101(75)90078-7
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Boundary conditions for forward biased p-n junctionsSolid-State Electronics, 1973
- Generation-recombination characteristic behavior of silicon diodesPhysica Status Solidi (a), 1973
- Boundary conditions for the space-charge region of a P-N-junctionSolid-State Electronics, 1969
- Hole-electron product of pn junctionsSolid-State Electronics, 1967
- The spatial variation of the quasi-Fermi potentials in p-n junctionsIEEE Transactions on Electron Devices, 1966
- High injection theories of the p−n junction in the charge neutrality approximationSolid-State Electronics, 1966